High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition

IEEE Journal of Quantum Electronics

Volumn 35, Issue 10, 1999, Pages 1535-1541

  Yang, G W ^a   Jennifer Hwu, R ^a   Xu, Z T ^b   Ma, X Y ^b  

^a Department of Electrical and Computer Engineering   (United States)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DIODES; SURFACES; TEMPERATURE;

CLADDING LAYERS; HYBRID MATERIAL SYSTEM; LIGHT OUTPUT POWER; RIDGE WAVEGUIDE STRUCTURE; SEMICONDUCTOR EPITAXIAL LAYERS;

QUANTUM WELL LASERS;

EID: 0342588099     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.792590     Document Type: Article

References (21)

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