980nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition

Electronics Letters

Volumn 34, Issue 13, 1998, Pages 1312-1313

  Yang, G W ^a   Xu, Z T ^a   Ma, X Y ^a   Xu, J Y ^a   Zhang, J M ^a   Chen, L H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); CURRENT VOLTAGE CHARACTERISTICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0032092249     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980944     Document Type: Article

References (9)

1. WADE, J.K., MAWST, L.J., and BOTEZ, D.: '6.1W continuous wave front-facet power from Al-free active-region (λ = 805 nm) diode lasers', Appl. Phys. Lett., 1998, 72, pp. 4-6
2. AL-MUHANNA, A., MAWST, L.J., BOTEZ, D., GARBUZOV, D.Z., MARTINELLI, R.U., and CONNOLLY, J.C.: '14.3W quasicontinuous wave front facet power from broad-waveguide Al-free 970nm diode lasers', Appl. Phys. Lett., 1997, 71, pp. 1142-1144
3. SAVOLAINEN, P., TOIVONEN, M., ASONEN, H., PESSA, M., and MURISON, R.: 'High-performance 980nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular beam epitaxy', IEEE Photonics Technol Lett., 1996, 8, pp. 986-988
4. DIAZ, J., YI, H.J., RAZEGHI, , and BURNHAM, G.T.: 'Long-term reliability of Al-free InGaAsP/GaAs (λ = 808 nm) lasers at high-power high-temperature operation', Appl. Phys. Lett., 1997, 71, pp. 3042-3044
5. BHATTACHARYA, A., MAWST, L.J., NAYAK, S., LI, J., and KUECH, T.F.: 'Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates', Appl. Phys. Lett., 1996, 68, pp. 2240-2242
6. 0.5P layers on misoriented (001) GaAs substrates grown by metalorganic vapor phase epitaxy', J. Cryst. Growth, 1994, 145, pp. 126-132
7. FRIEDMAN, D.J., HORNER, G.S., KURTZ, S.R., BERTNESS, K.A., OLSON, J.M., and MORELAND, J.: 'Effect of faceting on the bandgap of ordered GaInP', Appl. Phys. Lett., 1994, 65, pp. 878-880
8. GARBUZOV, D.Z., ABELES, J.H., MORRIS, N.A., GARDNER, P.D., TRIANO, A.R., HARVEY, M.G., GILBERT, D.B., and CONNOLLY,: 'High power separate confinement heterostructure AlGaAs/GaAs laser diodes with broadened waveguide', Proc. SPIE, 1996, 2682, pp. 20-26
9. MAWST, L.J., BHATTACHARYA, A., LOPEZ, J., BOTEZ, D., GARBUZOV, D.Z., DEMARCO, L., CONNOLLY, J.C., JANSEN, M., FANG, F., and NABIEV, R.F.: '8W continuous wave front-facet power from broad-waveguide Al-free 980nm diode lasers ', Appl. Phys. Lett., 1996, 69, pp. 1532-1534