Studies of the Auger spectrum from the (100) surface of GaAs using positron annihilation induced Auger electron spectroscopy

Radiation Physics and Chemistry

Volumn 58, Issue 5-6, 2000, Pages 667-673

  Fazleev, N G ^a,b   Starnes, S ^a   Weiss, A H ^a   Fry, J L ^a  

^a UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

^b KAZAN STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHARGED PARTICLES; ELECTRON EMISSION; ELECTRON MULTIPLIERS; ELECTRONS; EXCITONS; POSITRONS; STOICHIOMETRY; SURFACE STRUCTURE;

AUGER PEAK INTENSITIES; POSITRON ANNIHILATION;

SEMICONDUCTING GALLIUM ARSENIDE;

GALLIUM ARSENIDE;

CALCULATION; CONFERENCE PAPER; ELECTRON; ELECTRON MICROSCOPY; ENERGY; POSITRON; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 0034212713     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0969-806X(00)00236-X     Document Type: Conference Paper

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