Measurement of positron work function, positronium fraction and PAES intensities from GaAs(100)

Materials Science Forum

Volumn 255-257, Issue , 1997, Pages 638-640

  Kim, J H ^a   Nangia, A ^a   Jung, E ^a   Weiss, A H ^a  

^a UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

Author keywords

Auger Electron; GaAs; Mo+O; Positron Work Function; Positronium

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ION BOMBARDMENT;

POSITRON WORK FUNCTION; POSITRONIUM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031339343     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.255-257.638     Document Type: Article

References (7)

1. E. Yablonovitch, D. L. Allara, C. C. Chang, T. Gmitter, and T. B. Bright, Phys. Rev. Lett. 57, (1986) p.249
2. S. M. Sze, Semiconductor Devices, Physics and Technology (Wiley, New York, 1985), Chap. 11.
3. Y. Y. Shan, H. L. Au, C. C. Ling, T. C. Lee, B. K. Panda, S. Fung, C. D. Beling, Y. Y. Wang and H. M. Weng, Appl. Phys. A 59, (1994) p.259
4. A. Nangia, Master thesis, University of Texas at Arlington (1997).
5. Jibaly, Ph. D. Dissertation, University of Texas at Arlington (1989).
6. P.J. Schultz, K. G. Lynn, Review of Modem Physics Vol. 60, No. 3 (1988).
7. Y. Y. Shan, P. Asoka-Kumar, K.G. Lynn, S. Fung and C. D. Beling, Phys. Rev. B 54 (1996) p. 1982.