Probing the limits of optical lithography: the fabrication of sub-100nm devices with 193nm wavelength lithography

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 87-90

  Cirelli, R A ^a   Bude, J ^a   Houlihan, F ^a   Gabor, A ^a,b   Watson, G P ^a   Weber, G R ^a   Klemens, F P ^a   Sweeney, J ^a   Mansfield, W M ^a   Nalamasu, O ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b Olin Microelectronic Materials   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; COPOLYMERS; MASKS; MULTILAYERS; PHOTORESISTS; PROM; RESINS;

CONTACTLESS ARRAY; FLOATING GATE MEMORY; INORGANIC MULTILAYER ANTIREFLECTIVE COATING; PHASE SHIFT MASK;

MICROELECTRONIC PROCESSING;

EID: 0034207350     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00270-7     Document Type: Article

References (6)

1. 1. R. A. Cirelli, G.R. Weber "A multilayer inorganic antireflective system for use in 248nm deep ultraviolet lithography" J. Vac. Sci. Tech. , B, Vol. 14, Nov./Dec. 1996, 4229-4233
2. 2. J.D. Bude et al, 1997 IEDM Tech. Digest, p. 279-282
3. 3. T.I. Wallow; F. M. Houlihan; O. Nalamasu; E.A. Chandross; T.X. Neenan; E. Reichmanis Proc SPIE, 2724, 355, (1996)
4. 4. M.D. Levenson et al IEEE Trans. Electron. Devices 29, 1828 (1982)
5. 5. I. Satou et al, Control of acidity of the substrate for precise pattern fabrication using a chemically amplified resist, Proc. SPIE Advances in Resist Technology and Processing, vol. 3333, p. 820, 1998
6. 6. R.A. Cirelli, et al., "Optimizing numerical aperture and partial coherence to reduce proximity effects" Proc. SPIE Optical/Laser Microlithography, vol. 2197, p. 429, 1994