Modeling pattern transfer in ion-beam lithography masks

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 623-626

  Frisque, G ^a   Tejeda, R ^a   Engelstad, R ^a   Lovell, E ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COST EFFECTIVENESS; FINITE ELEMENT METHOD; MASKS; MATHEMATICAL MODELS; SILICON ON INSULATOR TECHNOLOGY;

MASK GEOMETRY; PATTERN TRANSFER; STENCIL PATTERN GEOMETRY;

ION BEAM LITHOGRAPHY;

EID: 0034206986     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00391-9     Document Type: Article

References (8)

1. 1. R. Tejeda, et al., Microelectron. Eng., 46, pp. 473-476, 1999.
2. 2. White Paper on Ion Projection Lithography, prepared for Intl. SEMATECH, Nov. 3, 1998 (prepared by IPL project group, unpublished).
3. 3. J. Butschke, et al., Microelectron. Eng., 46, pp. 473-476, 1999.
4. 4. R. Tejeda, et al., Microelectron, Eng., 46, pp. 485-488, 1999.
5. 5. D. Puisto, IBM, private communications.
6. 6. G. Frisque, et al., Proc. of SPIE, Emerging Lithographic Technologies III, Vol. 3676, pp. 768-778, 1999.
7. 7. R. M. Jones, Mechanics of Composite Materials, 2nd Ed., P. 81, 1999.
8. 8. W. Brantley, J. Appl. Phys., Vol. 44, No. 1, pp. 534-535, 1973.