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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 6 B, 2000, Pages 3811-3814

Origin, cause, and electronic structure of the symmetric dimers of Si(100) at 80 K

(4) Hata, Kenji a Kimura, Tomohiko a Takeuchi, Osamu a Shigekawa, Hidemi a

a UNIVERSITY OF TSUKUBA (Japan)

Author keywords

Defect; Dimer; Scanning tunneling microscope; Scanning tunneling spectroscope; Si(100)

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; DIMERS; ELECTRONIC STRUCTURE; LATTICE VIBRATIONS; PHASE TRANSITIONS; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPIC ANALYSIS; SURFACE STRUCTURE; THERMAL EFFECTS;

SCANNING TUNNELING SPECTROSCOPY;

SILICON;

EID: 0034206765 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.3811 Document Type: Article

Times cited : (6)

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