Beam-assisted-etching technique for fabrication of single crystal diamond field emitter tip

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 415-418

  Taniguchi, J ^a   Yokoyama, J ^a   Komuro, M ^b   Hiroshima, H ^b   Miyamoto, I ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; ELECTRON IRRADIATION; MICROELECTRONIC PROCESSING; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SPUTTERING; SYNTHETIC DIAMONDS;

BEAM ASSISTED ETCHING TECHNIQUE; SINGLE CRYSTAL DIAMOND FIELD EMITTER TIP;

REACTIVE ION ETCHING;

EID: 0034206451     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00346-4     Document Type: Article

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