Interface studies of InAs/GaSb superlattices by Raman scattering

Surface Science

Volumn 267, Issue 1-3, 1992, Pages 176-180

  Lopez C ^a   Springett, R J ^a   Nicholas, R J ^a   Walker, P J ^a   Mason, N J ^a   Hayes, W ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPY, RAMAN; SUPERLATTICES - SEMICONDUCTOR;

GALLIUM ANTIMONIDE; INDIUM ARSENIDE; MODULATED SEMICONDUCTOR STRUCTURES;

SEMICONDUCTOR MATERIALS;

EID: 0026853820     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(92)91115-R     Document Type: Article

References (13)

1. Phonons in semiconductor superlattices
2. Interaction of optical phonons with electrons in an InAs quantum well
3. Phonons in GaAs/AlAs superlattices grown along the [111] direction