메뉴 건너뛰기
Applied Physics Letters
Volumn , Issue , 1995, Pages 3328-
High etch rates of GaN with magnetron reactive ion etching in BCl3 plasmas
(4)
McLane, G F
a
Casas, L
a
Pearton, S J
b
Abernathy, C R
b
a
U S ARMY RESEARCH LABORATORY
(
United States
)
b
UNIVERSITY OF FLORIDA
(
United States
)
Author keywords
[No Author keywords available]
Indexed keywords
EID
:
36449001822
PISSN
:
00036951
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1063/1.113746
Document Type
:
Article
Times cited : (
54
)
References (
10
)
1
0028368821
(1994)
Appl. Phys. Lett.
, vol.64
, pp. 887
Lin, M.E.
1
Fan, Z.F.
2
Ma, Z.
3
Allen, L.H.
4
Markoc, H.
5
2
21544471895
(1993)
Appl. Phys. Lett.
, vol.63
, pp. 2777
Adesida, I.
1
Mahajan, A.
2
Andideh, E.
3
Asif Khan, M.
4
Olsen, D.T.
5
Kuznia, J.N.
6
3
21544481790
(1994)
Appl. Phys. Lett.
, vol.64
, pp. 2294
Pearton, S.J.
1
Abernathy, C.R.
2
Ren, F.
3
4
84957230417
(1993)
J. Vac. Sci. Technol. A
, vol.11
, pp. 1772
Pearton, S.J.
1
Abernathy, C.R.
2
Ren, F.
3
Lothian, J.R.
4
Wisk, P.W.
5
Katz, A.
6
5
21544471008
(1994)
Appl. Phys. Lett.
, vol.65
, pp. 889
Adesida, I.
1
Ping, A.T.
2
Youtsey, C.
3
Dow, T.
4
Asif Khan, M.
5
Olsen, D.T.
6
Kuznia, J.N.
7
6
2442521932
(1993)
J. Vac. Sci. Technol. B
, vol.11
, pp. 333
McLane, G.F.
1
Meyyappan, M.
2
Lee, H.S.
3
Cole, M.W.
4
Eckart, D.W.
5
Lareau, R.T.
6
Namaroff, M.
7
Sasserath, J.
8
7
0001425994
(1993)
J. Vac. Sci. Technol. B
, vol.11
, pp. 179
Abernathy, C.R.
1
Pearton, S.J.
2
Ren, F.
3
Wisk, P.
4
8
84871339177
Private communication
Nakamura, S.
1
9
0005319999
(to be published)
Appl. Phys. Lett.
Abernathy, C.R.
1
MacKenzie, J.D.
2
Bharatan, S.
3
Jones, K.S.
4
Wilson, R.G.
5
Pearton, S.J.
6
10
21144459356
(1993)
J. Vac. Sci. Technol. A
, vol.11
, pp. 1753
McLane, G.F.
1
Cole, M.W.
2
Eckart, D.W.
3
Cooke, P.
4
Moerkirk, R.
5
Meyyappan, M.
6
* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
