Radiation hardening of power mosfets using electrical stress

IEEE Transactions on Nuclear Science

Volumn 47, Issue , 2000, Pages 641-646

  Picard, C ^a,b   Brisset, C ^a   Quittard, O ^a   Hoffmann, A ^b   Joffre, F ^a   Charles, J P ^b  

^a CEA SACLAY   (France)

^b Centre Lorrain d Optique et Electronique des Solides   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL STRESS; PRE IRRADIATION TREATMENT; TOTAL IONIZING DOSE;

DOSIMETRY; GATES (TRANSISTOR); IRRADIATION; MOSFET DEVICES; THRESHOLD VOLTAGE;

RADIATION HARDENING;

EID: 0034204681     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.856492     Document Type: Article

References (13)

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