Design optimization of radiation-hardened CMOS integrated circuits

IEEE Transactions on Nuclear Science

Volumn 22, Issue 6, 1975, Pages 2208-2213

  Fossum, J G ^a   Derbenwick, G F ^a   Gregory, B L ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84936553648     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1975.4328107     Document Type: Article

References (5)

1. K. G. Aubuchon, “Radiation Hardening of P-MOS Devices by Optimization of the Thermal SiC^ Gate Insulator”, IEEE Trans. Nuclear Science, Vol. NS-18, pp. 117-125, December 1971.
2. G. F. Derbenwick and B. L. Gregory, “Process Optimization of Radiation-Hardened CMOS Integrated Circuits”, this journal.
3. J. G. Fossum, G. F. Derbenwick, and B. L. Gregory Sandia Laboratories Report SAND75-5246, July 1975
4. A. S. Grove, Physics and Technology of Semiconductor Devices. New York; Wiley, 1967.
5. B. L. Gregory, “Process Controls for Radiation-Hardened Aluminum-Gate Balk Silicon CMOS”, this journal.