Redistribution of phosphorus implanted into silicon doped heavily with Boron

Semiconductors

Volumn 34, Issue 6, 2000, Pages 629-633

  Tishkovskii E G ^a   Obodnikov, V I ^a   Taskin, A A ^a   Feklistov, K V ^a   Seryapin, V G ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034196075     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1188043     Document Type: Article

References (15)

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