Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation

Semiconductors

Volumn 31, Issue 3, 1997, Pages 279-282

  Myasnikov, A M ^a   Obodnikov, V I ^a   Seryapin, V G ^a   Tishkovskii E G ^a   Fomin, B I ^a   Cherepov, E I ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

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[No Author keywords available]

Indexed keywords

EID: 0041108456     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187127     Document Type: Article

References (11)

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