Influence of the initial boron doping level on the boron atom distribution arising as a result of heat treatment in silicon implanted with boron ions

Semiconductors

Volumn 32, Issue 4, 1998, Pages 372-374

  Obodnikov, V I ^a   Tishkovskii E G ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039413646     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187398     Document Type: Article

References (9)

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8. G. D. Watkins, Radiation Damage in Semiconductors (Dunod, Paris, 1964), p. 97.
9. G. Watkins, in Lattice Defects in Semiconductors (Conf. Ser. No. 23., Inst. Phys. London-Bristol, 1975), p. 1.