Kinetics of the redistribution of an impurity in quasiperiodic structures appearing in heavily boron-doped silicon irradiated by boron ions

Semiconductors

Volumn 31, Issue 6, 1997, Pages 600-604

  Myasnikov, A M ^a   Obodnikov, V I ^a   Seryapin, V G ^a   Tishkovskii E G ^a   Fomin, B I ^a   Cherepov, E I ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

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EID: 0347936224     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187225     Document Type: Article

References (14)

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