Specifics of MOCVD formation of InxGa1 - xN inclusions in a GaN matrix

Semiconductors

Volumn 34, Issue 6, 2000, Pages 621-625

  Soshnikov, I P ^a   Lundin, V V ^a   Usikov, A S ^a   Kalmykova, I P ^a   Ledentsov, N N ^a   Rosenauer, A ^b   Neubauer, B ^b   Gerthsen, D ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034195936     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1188041     Document Type: Article

References (12)

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