Nitridation effects of GaP(1 1 1)B substrate on MOCVD growth of InN

Journal of Crystal Growth

Volumn 212, Issue 3, 2000, Pages 379-384

  Bhuiyan, Ashraful G ^a   Hashimoto, A ^a   Yamamoto, A ^a   Ishigami, R ^b  

^a UNIVERSITY OF FUKUI   (Japan)

^b WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDING; POLYCRYSTALLINE MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

INDIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0034188391     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00322-5     Document Type: Article

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