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Volumn 366, Issue 1-2, 2000, Pages 102-106
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Growth of RuO2 thin films by pulsed-laser deposition
a
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL GROWTH;
CRYSTALLOGRAPHY;
DIELECTRIC MATERIALS;
LASER ABLATION;
PRESSURE EFFECTS;
RUTHENIUM COMPOUNDS;
SILICON;
SINTERING;
SUBSTRATES;
THERMAL EFFECTS;
THERMODYNAMIC STABILITY;
X RAY DIFFRACTION ANALYSIS;
OXYGEN PRESSURE;
PULSED LASER DEPOSITION;
RUTHENIUM DIOXIDE;
SINTERED OXIDE TARGET;
THIN FILMS;
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EID: 0034188122
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(99)01111-6 Document Type: Article |
Times cited : (23)
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References (13)
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