Influence of redistribution of electrons in the conduction band on the lattice parameters of AlxGa1-xAs

Applied Physics Letters

Volumn 69, Issue 22, 1996, Pages 3366-3368

  Bak Misiuk J ^a   Leszczynski M ^b   Paszkowicz, W ^a   Domagala J ^a  

^a INSTITUTE OF PHYSICS   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CARRIER CONCENTRATION; ELECTRONS; LATTICE CONSTANTS; SELENIUM; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SULFUR;

ALUMINUM GALLIUM ARSENIDE; BOND METHOD; CONDUCTION BAND; DEFORMATION POTENTIALS;

CHARGE TRANSFER;

EID: 0030287706     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117308     Document Type: Article

References (20)

1. T. Figielski, Phys. Status Solidi 1, 306 (1961).
2. W. Keyes, Solid State Phys. 20, 37 (1967).
3. U. Pietsch and U. Unger, Phys. Status Solidi A 80, 165 (1983).
4. G. Contreras, L. Tapfer, A. K. Sood, and M. Cardona, Phys. Status Solidi B 131, 475 (1985).
5. G. S. Cargill III, J. Angillelo, and K. J. Kavanagh, Phys. Rev. Lett. 61, 1748 (1988).
6. G. S. Cargill III, A. Segmüller, T. F. Keuch, and T. N. Theis, Phys. Rev. B 46, 10 078 (1992).
7. J. Ba̧k-Misiuk, H. G. Brühl, W. Paszkowicz, and U. Pietsch, Phys. Status Solidi A 106, 451 (1988).
8. M. Leszczyński, J. Ba̧k-Misiuk, J. Domagała, J. Muszalski, M. Kaniewska, and J. Marczewski, Appl. Phys. Lett. 67, 539 (1995).
9. J. Ba̧k-Misiuk, M. Leszczyński, J. Domagała, and Z. R. I. Zytkiewicz, J. Appl. Phys. 78, 6994 (1995).
10. B. Mullin, B. W. Straughan, C. M. H. Driscoll, and A. F. Willoughby, CRC Crit. Rev. Solid State Mater. Sci. Nov., 441 (1975).
11. G. K. Kuznetsov, A. D. Barsukov, O. W. Tselevin, W. W. Olenin, and I. B. Berdavtseva, Izv. Akad. Nauk SSSR, Neorg. Mater. 9, 1053 (1973).
12. W. R. Wagner, N. E. Schumaker, J. L. Zilko, P. J. Anthony, and V. Swaminathan, J. Electrochem. Soc. 130, 670 (1983).
13. W. L. Bond, Acta Crystallogr. 13, 814 (1960).
14. J. A. Van Vechten and J. C. Phillips, Phys. Rev. B 2, 2160 (1970).
15. M. Leszczyński, S. Podlasin, and T. Suski, J. Appl. Crystallogr. 26, 1 (1993).
16. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers, Part A: Fundamental Principles (Academic, New York, 1978).
17. S. Adachi, in Properties of Aluminum Gallium Arsenide, edited by S. Adachi, EMIS Datareviews Series No. 7 (INSPEC 1993), p. 25.
18. C. G. Van de Walle, Phys. Rev. B 39, 1871 (1989).
19. M. Cardona and N. E. Christensen, Phys. Rev. B 35, 6182 (1987).
20. S. Adachi, J. Appl. Phys. 58, R1 (1985).