Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 2, Issue 1-4, 1998, Pages 261-266

  Adamowicz, Boguslawa ^a,b   Ikeya, Kengo ^a   Mutoh, Morimichi ^a   Saitoh, Toshiya ^a   Fujikura, Hajime ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

AlGaAs; Interface control layer; Passivation; Photoluminescence surface state spectroscopy

Indexed keywords

EID: 0347569882     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(98)00055-1     Document Type: Article

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