Determination of design parameters for lateral carrier localization in quantum dot lasers

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 1998, Pages 111-112

  Kim, J K ^a   Strand, T A ^a   Naone, R L ^a   Coldren, L A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CATHODOLUMINESCENCE; DIFFUSION IN SOLIDS; ELECTRIC LOSSES; LEAKAGE CURRENTS; SEMICONDUCTOR QUANTUM DOTS; THRESHOLD VOLTAGE;

LATERAL CARRIER LOCALIZATION; QUANTUM DOT LASERS;

SEMICONDUCTOR LASERS;

EID: 0032300591     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)