Electron-induced dissociation of SiH complexes in hydrogenated Si-doped GaAs. Application to the fabrication of microstructures

Superlattices and Microstructures

Volumn 27, Issue 5, 2000, Pages 431-435

  Silvestre, S ^a   Constant, E ^a   Bernard Loridant, D ^a   Constant, M ^b   Chevallier, J ^c  

^a INSTITUT D ELECTRONIQUE   (France)

^b UNIVERSITÉ DES SCIENCES ET TECHNOLOGIES DE LILLE   (France)

^c Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; DEUTERIUM; DISSOCIATION; ELECTRON BEAMS; HOT CARRIERS; HYDROGEN; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR PLASMAS;

ELECTRON-INDUCED DISSOCIATION;

SEMICONDUCTING FILMS;

EID: 0034187068     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0880     Document Type: Article

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