Isotope effect on the reactivation of neutralized Si dopants in hydrogenated or deuterated GaAs: The role of hot electrons

Journal of Applied Physics

Volumn 85, Issue 9, 1999, Pages 6526-6529

  Constant, E ^a   Bernard Loridant, D ^a   Meziere S ^a   Constant, M ^b   Chevallier, J ^c  

^a CNRS   (France)

^b UNIVERSITÉ DES SCIENCES ET TECHNOLOGIES DE LILLE   (France)

^c CNRS Lab Phys Solides de Bellevue   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHEMICAL BONDS; DEUTERIUM; DISSOCIATION; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON TRANSITIONS; HOT CARRIERS; HYDROGEN; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

DOPANT REACTIVATION; HOT ELECTRON EXCITATION;

SCHOTTKY BARRIER DIODES;

EID: 0032613483     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370289     Document Type: Article

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