Production and characterization of Nd, Cr:GSGG thin films on Si(001) grown by pulsed laser ablation

Applied Physics A: Materials Science and Processing

Volumn 70, Issue 4, 2000, Pages 425-429

  Willmott, P R ^a   Manoravi, P ^a   Holliday, K ^b  

^a UNIVERSITY OF ZURICH   (Switzerland)

^b UNIVERSITY OF SAN FRANCISCO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; KINETIC ENERGY; LASER ABLATION; NEODYMIUM COMPOUNDS; OPTICAL PROPERTIES; SEMICONDUCTING SILICON; SPECTROSCOPY; STOICHIOMETRY;

HETEROEPITAXIAL GROWTH; PULSED LASER ABLATION; TIME OF FLIGHT QUADRUPOLE MASS SPECTROSCOPY;

THIN FILMS;

EID: 0034171861     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390051061     Document Type: Article

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