Growth of Ti:sapphire single crystal thin films by pulsed laser deposition

Thin Solid Films

Volumn 300, Issue 1-2, 1997, Pages 68-71

  Anderson, Andrew A ^a   Eason, Robert W ^a   Jelinek, Miroslav ^b   Grivas, Christos ^c   Lane, David ^d   Rogers, Keith ^d   Hickey, L M B ^a   Fotakis, Costas ^c  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c INSTITUTE OF COMPUTER SCIENCE   (Greece)

^d CRANFIELD UNIVERSITY   (United Kingdom)

Author keywords

Titanium; X ray diffraction

Indexed keywords

DEPOSITION; FILM GROWTH; MASS SPECTROMETRY; PLASMA APPLICATIONS; PULSED LASER APPLICATIONS; SAPPHIRE; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SUBSTRATES; TITANIUM; X RAY DIFFRACTION ANALYSIS;

INDUCED X RAY EMISSION; ION BEAM CHANNELLING;

THIN FILMS;

EID: 0031145306     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09455-2     Document Type: Article

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