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Journal of Materials Research

Volumn 15, Issue 3, 2000, Pages 772-782

Structure and thermoelectric properties of binary and Fe-doped iridium silicide thin films

(7) Pitschke, W a Kurt, R a Heinrich, A a Schumann, J a Griessmann H a Vinzelberg, H a Burkov, A T b

a IFW DRESDEN (Germany)

b UNIVERSITY OF THE RYUKYUS (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRIC POWER FACTOR; ELECTRON BEAMS; EVAPORATION; FILM PREPARATION; IRIDIUM COMPOUNDS; IRON; MAGNETRON SPUTTERING; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; THERMOELECTRICITY; TRANSPORT PROPERTIES; X RAY DIFFRACTION ANALYSIS;

BINARY THIN FILMS;

THIN FILMS;

EID: 0034160207 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.2000.0111 Document Type: Article

Times cited : (6)

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