Phase formation process of Irx Si1-x thin films structure and electrical properties

Thin Solid Films

Volumn 310, Issue 1-2, 1997, Pages 8-18

  Kurt, R ^a   Pitschke, W ^a   Heinrich, A ^a   Schumann, J ^a   Thomas, J ^a   Wetzig, K ^a   Burkov, A ^b  

^a IFW DRESDEN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

High temperature x ray diffraction; Indium suicides; Phase formation; Thermoelectric transport properties; Thin films

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CRYSTAL LATTICES; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; ELECTRON DIFFRACTION; ELECTRON TRANSPORT PROPERTIES; LATTICE CONSTANTS; MORPHOLOGY; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; X RAY CRYSTALLOGRAPHY;

IRIDIUM SILICIDES;

SEMICONDUCTING FILMS;

EID: 0031270284     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00326-X     Document Type: Article

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