Process development of gated field emitter arrays with dry etched amorphous silicon microtips on glass substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 2, 2000, Pages 984-988

  Choi, J H ^a   Park, Y J ^a   Lee, H W ^a   Oh, H W ^a   Kim, J W ^a   Lee, N S ^a   Cha, S N ^a   Jung, J E ^a   Choi, Y S ^a   Kim, J M ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; AMORPHOUS SILICON; CHROMIUM; DOPING (ADDITIVES); ELECTRODES; GLASS; MASKS; PHOSPHORUS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SUBSTRATES; THERMOOXIDATION;

AMORPHOUS SILICON MICROTIPS; GATED FIELD EMITTER ARRAYS;

FIELD EMISSION CATHODES;

EID: 0034156288     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591312     Document Type: Article

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