X-ray reflectivity study on TiN/Ti/Si structures before and after annealing

Thin Solid Films

Volumn 360, Issue 1-2, 2000, Pages 89-95

  Santucci, S ^a   Giuliani, P ^a   Picozzi, P ^a   Phani, A R ^a   De Biase, M ^b   Alfonsetti, R ^b   Moccia, G ^b   Missori, M ^b  

^a UNIVERSITY OF L'AQUILA   (Italy)

^b Micron Technology Italia   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CRYSTALLOGRAPHY; HETEROJUNCTIONS; NITRIDES; OSCILLATIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; GRAZING ANGLE X RAY DIFFRACTION TECHNIQUE; SILICIDE; TAPPING MODE ATOMIC FORCE MICROSCOPY; X RAY REFLECTIVITY;

THIN FILMS;

EID: 0034140972     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00891-3     Document Type: Article

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