Photoluminescence measurements of low-level oxygen in thin silicon crystal using a C-O complex formed through carbon implantation

Journal of the Electrochemical Society

Volumn 143, Issue 9, 1996, Pages 2876-2884

  Nakamura, M ^a,c   Kitamura, E ^a   Suzuki, T ^a,c   Nagai, S ^b   Sunaga, H ^b   Aoki, Y ^b   Naramoto, H ^b  

^a HITACHI LTD   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; IRRADIATION; PHOTOLUMINESCENCE; SILICON;

CARBON IMPLANTATION; CHARGED PARTICLE ACTIVATION ANALYSIS; LOW LEVEL OXYGEN CONCENTRATION; THIN CRYSTAL;

CRYSTALS;

EID: 0030244947     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837121     Document Type: Article

References (19)

1. For example, J. C. Mikkelsen, Jr., in Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, J. C. Mikkelsen, Jr., S. J. Pearton, J. W. Corbett, and S. J. Pennycook, Editors, Vol. 59, p. 3, MRS, Pittsburgh, PA (1986).
2. R. C. Newman, ibid., p. 403.
3. M. Tajima, Appl. Phys. Lett., 32, 719(1978).
4. J. M. Trombetta and G. D. Watching, ibid., 51, 1103 (1987).
5. K. P. O'Donnell, K. M. Lee, and G. D. Watkins, Physica, 116B, 258 (1983).
6. D. J. Robbins, R. W. Hardeman, D. B. Gasson, and A. D. Pitt, in Reduced Temperature Processing for VLSI, R. Reif and G. R. Srinivasan, Editors, PV 86-5, p. 307, The Electrochemical Society Proceedings Series, Pennington, NJ (1986).
7. M. Nakamura, E. Kitamura, Y. Misawa, T. Suzuki, S. Nagai, and H. Sunaga, This Journal, 141, 3576 (1994).
8. M. Nakamura, A. S. Byrne, E. Kitamura, T. Suzuki, S. Nagai, H. Sunaga, Y. Aoki, and H. Naramoto, J. Appl. Phys., 78, 4407 (1995).
9. J. L. Regolini, J. P. Stoquert, C. Ganter, and P. Siffert, This Journal, 133, 2165 (1986).
10. T. Kimura, S. Kagiyama, and S. Yugo, Thin Solid Films, 81, 319 (1981).
11. M. Nakamura, E. Kitamura, Y. Misawa, T. Suzuki, S. Nagai, and H. Sunaga, in Semiconductor Silicon 1990, R. Huff, K. G. Barraclough, and J.-i. Chikawa, Editors, PV 90-7, p. 1005, The Electrochemical Society Proceedings Series, Pennington, NJ (1990).
12. G. Davies, Phys. Rep., 176, 83 (1989).
13. For example, H. Ryssel and I. Ruge, Ion Implantation, p. 5, John Wiley & Sons, Inc., New York (1986).
14. C. G. Kirkpatrick, D. R. Myer, and B. G. Streetman, Radiat. Effects, 31, 175 (1977).
15. G. Davies, E. C. Lightowlers, R. C. Newman, and A. S. Oates, Semicond. Sci. Technol., 2, 524 (1987).
16. O. O. Awadelkarim, A. Henry, B. Monemar, J. L. Lindstrom, Y. Zhang, and J. W. Corbett, Phy. Rev. B, 42, 5635 (1990).
17. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids, Pergamon Press, New York (1985).
18. U. Gosele, in Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, J. C. Mikkelsen, Jr., S. J. Pearton, J. W. Corbett, and S. J. Pennycook, Editors, Vol. 59, p. 419, MRS, Pittsburgh, PA (1986).
19. M. Tamura, T. Ando, and K. Ohyu, Nucl. Instrum. Methods Phys. Res., B59/60, 572 (1991).