Cluster shapes in STM images of isolate clusters and cluster materials

Surface Science

Volumn 446, Issue 1-2, 2000, Pages 98-102

  Klyachko, D ^a   Chen, D M ^b  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRON SCATTERING; ELECTRON TUNNELING; FULLERENES; MATHEMATICAL MODELS; MOLECULAR STRUCTURE; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

CLUSTER GEOMETRY; CLUSTER MATERIALS;

SURFACE STRUCTURE;

EID: 0034140569     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)01110-3     Document Type: Article

References (29)

1. Kelly M.J. Low-Dimensional Semiconductors. 1995;Clarendon Press, London.
2. Weiss P.S., Eigler D.M. Phys. Rev. Lett. 71:1993;3139.
3. Sautet P., Joachim C. Chem. Phys. Lett. 185:1991;23.
4. Sautet P., Bocquet M.-I. Phys. Rev. B. 53:1996;4910.
5. Joachim C., Sautet P. Behm R.J., et al. Scanning Electron Microscopy and Related Methods. 1990;377 Kluwer, Amsterdam.
6. Hashizume T., Motai K., Wang X.D., Shinohara H., Saito Y., Maruyama Y., Ohno K., Kawazoe Y., Nishina Y., Pickering H.W., Kuk Y., Sakurai T. Phys. Rev. Lett. 71:1993;2959.
7. Yao Xiaowei, Ruskell T.G., Workman R.K., Sarid D., Chen Dong. Surf. Sci. 367:1996;L85. and references cited therein.
8. Behler S., Lang H.P., Pan S.H., Thommen-Geiser V., Hofer R., Bernasconi M., Güntherodt H.-J. Kuzmany H., Fink J., Mehring M., Roth S. Electronic Properties of Fullerenes. 1996;232 Springer, Berlin.
9. Chavy C., Joachim C., Altibelly A. Chem. Phys. Lett. 214:1993;569.
10. Wang X.-D., Hashizume T., Shinohara H., Saito Y., Nishina Y., Sakurai T. Jpn. J. Appl. Phys. 31:1992;L983.
11. Hashizume T., Wang X.-D., Nishina Y., Shinohara H., Saito Y., Sakurai T. Jpn. J. Appl. Phys. 32:1993;L132.
12. Wang X.-D., Xue Q., Hashizume T., Shinohara H., Nishina Y., Sakurai T. Appl. Surf. Sci. 76-77:1994;329.
13. Klyachko D., Chen D.M. Phys. Rev. Lett. 75:1995;3693.
14. Klyachko D., Chen D.M. J. Vac. Sci. Technol. B. 14:1996;974.
15. Krätschmer W., Lamb L.D., Fostirovios K., Huffman D.R. Nature. 347:1990;354.
16. Hasegava Y., Lyo I.-W., Avouris P. Appl. Surf. Sci. 76-77:1994;347.
17. Girard Ch., Lambin Ph., Dereux A., Lucas A.A. Phys. Rev. B. 49:1994;11425.
18. Chadi D.J. Phys. Rev. Lett. 43:1979;43.
19. Joachim C., Gimchewski J.K., Schlittler R.R., Chavy C. Phys. Rev. Lett. 74:1995;2102.
20. Joachim C., Gimchewski J.K. Europhys. Lett. 30:1995;409.
21. Waseda Y., Hirata K., Ohtani M. High Temp. High Press. 7:1975;221.
22. Bracher C., Riza M., Kleber M. Phys. Rev. B. 56:1997;7704.
23. Bell L.D. Phys. Rev. Lett. 77:1996;3893.
24. Zheng J.F., Liu X., Newman N., Weber E.R., Ogletree D.F., Salmeron M. Phys. Rev. Lett. 72:1994;1490.
25. Zheng J.F., Salmeron M., Weber E.R. Appl. Phys. Lett. 64:1994;1836.
26. Schmid M., Hebenstreit W., Varga P. Phys. Rev. Lett. 76:1996;2298.
27. Kobayashi K. Phys. Rev. B. 54:1996;17029.
28. Tsukada M., Kobayashi K., Isshiki N. Surf. Sci. 242:1991;12.
29. Giraud C., Joachim C., Chavy C., Sautet P. Surf. Sci. 282:1993;400.