Growth of a uniaxial incommensurate C60 lattice on Ge(100)2×1

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 2, 1996, Pages 974-978

  Klyachko, D ^a   Chen, Dongmin ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041641116     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589187     Document Type: Article

References (17)

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14. 60 is ∼ 10 Å. See, for example, L. A. Girifalco, J. Phys. Chem. 96, 858 (1992).
15. 60 molecules appear overlapped in STM images due to the convolution with the apex of the tip. We fit the line cuts across two molecules with two identical Gaussian functions and their spatial separation is assigned to be the distance between the two molecules.
16. 60 on Si(100) as determined in Ref. 9, but our model differs from theirs in the buckled dimer arrangement. On the other hand, our models are consistent with those proposed in Ref. 6, which, however, was not derived from precise analysis.
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