Planar homoepitaxial laser diodes grown on aluminium-doped ZnSe substrates

Electronics Letters

Volumn 34, Issue 9, 1998, Pages 891-893

  Wenisch, H ^a   Ohkawa, K ^a   Isemann, A ^a   Fehrer, M ^a   Hommel, D ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CURRENT DENSITY; ELECTRIC CONDUCTIVITY OF SOLIDS; LASER PULSES; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

PLANAR HOMOEPITAXIAL LASER DIODES;

SEMICONDUCTOR LASERS;

EID: 0032050844     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980669     Document Type: Article

References (5)

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5. OHKI, A., OHNO, T., MATSUOKA, T., and ICHIMURA, Y.: 'Continuous-wave operation of ZnSe-based laser diodes homoepitaxially grown on semi-insulating ZnSe substrates', Electron. Lett., 1997, 33, (11), pp. 990-991