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Volumn 33, Issue 11, 1997, Pages 990-991

Continuous-wave operation of ZnSe-based laser diodes homoepitaxially grown on semi-insulating ZnSe substrates

Author keywords

Diodes; Semiconductor growth; Semiconductor junction lasers

Indexed keywords

SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH;

EID: 0031145612     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970624     Document Type: Article
Times cited : (13)

References (8)
  • 4
    • 21544462660 scopus 로고
    • Degradation of II-VI based blue-green light emitters
    • GUHA, S., DEPUYDT, J.M., HAASE, M.A., QIU, J., and CHENG, H.: 'Degradation of II-VI based blue-green light emitters', Appl. Phys. Lett., 1993, 63, (23), pp. 3107-3109
    • (1993) Appl. Phys. Lett. , vol.63 , Issue.23 , pp. 3107-3109
    • Guha, S.1    Depuydt, J.M.2    Haase, M.A.3    Qiu, J.4    Cheng, H.5
  • 6
    • 0031074369 scopus 로고    scopus 로고
    • Investigation of degradation in homoepitaxially grown ZnCdSe/ZnSe light emitting diode
    • to be published
    • OHNO, T., OHKI, A., and MATSUOKA, T.: 'Investigation of degradation in homoepitaxially grown ZnCdSe/ZnSe light emitting diode', to be published in Jpn. J. Appl. Phys. Lett., 1997, 36, pp. 190-193
    • (1997) Jpn. J. Appl. Phys. Lett. , vol.36 , pp. 190-193
    • Ohno, T.1    Ohki, A.2    Matsuoka, T.3
  • 8
    • 0019875084 scopus 로고
    • 1.5γm region InP/GaInAsP buried heterostructure lasers on semiinsulating substrates
    • MATSUOKA, T., TAKAHEI, K., NOGUCHI, Y., and NAGAI, H.: 1.5γm region InP/GaInAsP buried heterostructure lasers on semiinsulating substrates', Electron. Lett., 1981, 17, (1), pp. 12-14
    • (1981) Electron. Lett. , vol.17 , Issue.1 , pp. 12-14
    • Matsuoka, T.1    Takahei, K.2    Noguchi, Y.3    Nagai, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.