Tunable B = 0 spin-splitting and its effect on the metallic behavior of GaAs two-dimensional holes

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 6, Issue 1, 2000, Pages 284-287

  Papadakis, S J ^a   Poortere, E P De ^a   Manoharan, H C ^b,c   Shayegan, M ^a   Winkler, R ^b  

^a Princeton University   (United States)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL SYMMETRY; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC FIELD EFFECTS; METAL INSULATOR BOUNDARIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SHUBNIKOV-DE HAAS EFFECT; THERMAL EFFECTS;

METAL-INSULATOR TRANSITION; SPIN SPLITTING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034138535     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00155-1     Document Type: Article

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