Possible large zero-field spin-splittings in InxGa1-xAs/InyAl1-yAs (x, y = 0.75) heterojunctions

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 6, Issue 1, 2000, Pages 771-774

  Yamada, S ^a   Sato, Y ^a   Gozu, S ^a   Kikutani, T ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON GAS; FIELD EFFECT TRANSISTORS; HALL EFFECT; INTERFACES (MATERIALS); MAGNETORESISTANCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WIRES;

SPIN SPLITTING; SPIN-ORBIT COUPLING;

HETEROJUNCTIONS;

EID: 0034138525     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00202-7     Document Type: Article

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