Dual-layer light emitting devices based on polymeric Langmuir-Blodgett films

Journal of Materials Chemistry

Volumn 10, Issue 1, 2000, Pages 163-167

  Jung, Gun Y ^a   Pearson, Christopher ^a   Kilitziraki, Mary ^a   Horsburgh, Lockhart E ^a   Monkman, Andrew P ^a   Samuel, Ifor D W ^a   Petty, Michael C ^a  

^a DURHAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CHEMICAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; ELECTRON TRANSPORT; FILM; FREQUENCY MODULATION; IMPEDANCE; LIGHT EMITTING DIODE;

EID: 0034088682     PISSN: 09599428     EISSN: None     Source Type: Journal    
DOI: 10.1039/a903484f     Document Type: Article

References (24)

1. 1 J. H. Burroughes, D. D. C. Bradley, A. R. Brown, R. N. Marks, K. Mackay, R. H. Friend, P. L. Burn and A. B. Holmes, Nature, 1990, 347, 539.
2. 2 D. D. C. Bradley, Synth. Met., 1993, 54, 401.
3. 3 C. W. Tang and S. A. Vanslyke, Appl. Phys. Lett., 1987, 51, 913; J. Kido, Phys. World, 1999, 12, 27.
4. 3 C. W. Tang and S. A. Vanslyke, Appl. Phys. Lett., 1987, 51, 913; J. Kido, Phys. World, 1999, 12, 27.
5. 4 A. J. Heeger, I. D. Parker and Y. Yang, Synth. Met., 1994, 67, 24.
6. 5 M. I. Sluch, C. Pearson, M. C. Petty, M. Halim and I. D. W. Samuel, Synth. Met., 1998, 94, 285.
7. 6 A. Bolognesi, C. Botta, G. Bajo, R. Österbacka, T. Östergård and H. Stubb, Synth. Met., 1998, 98, 123.
8. 7 R. Österbacka, G. Juška, K. Arlauskas, A. J. Pal, K.-M. Källman and H. Stubb, J. Appl. Phys., 1998, 84, 3359.
9. 8 R. Österbacka, A. J. Pal and H. Stubb, Thin Solid Films, 1998, 327-329, 668.
10. 9 L. M. Goldenberg, M. Leclerc, A. Donat-Bouillud, C. Pearson and M. C. Petty, Thin Solid Films, 1998, 327-329, 715.
11. 10 S. Dailey, M. Halim, I. D. W. Samuel and A. P. Monkman, Proc. SPIE Organic Light-Emitting Materials and Devices, San Diego, 1997, 3148, 82.
12. 11 S. Dailey, M. Halim, E. Rebourt, L. E. Horsburgh, I. D. W. Samuel and A. P. Monkman, J. Phys: Condens. Matter, 1998, 10, 5171.
13. 12 T. Yamomoto, T. Maruyama, Z. -H. Zhou, T. Ito, T. Fukuda, Y. Yoneda, F. Begum, T. Ikeda, S. Sasaki, H. Takezoe, A. Fukuda and K. Kubota, J. Am. Chem. Soc., 1994, 116, 4832.
14. 13 C. Pearson, M. Kilitziraki, S. Dailey, L. E. Horsburgh, A. P. Monkman, I. D. W. Samuel and M. C. Petty, submitted to IEEE Trans.
15. 14 J. C. Scott, J. H. Kaufman, P. J. Brock, R. Dipietro, J. Salem and J. A. Goitia, J. Appl. Phys., 1996, 79, 2745.
16. 15 M. Meier, S. Karg and W. Riess, J. Appl. Phys., 1997, 82, 1961.
17. 16 F. Garten, J. Vrijmoeth, A. R. Schlatmann, R. E. Gill, T. M. Klapwijk and G. Hadziioannou, Synth. Met., 1996, 76, 85.
18. 17 I. H. Campbell, D. L. Smith and J. P. Ferraris, Appl. Phys. Lett., 1995, 66, 3030.
19. 18 A. J. Campbell, D. D. C. Bradley and D. G. Lidzey, J. Appl. Phys., 1997, 82, 6326.
20. 19 W. Bijnens, J. Manca, T. D. Wu, M. D'Olieslaeger, D. Vanderzande, J. Gelan, W. De Ceuninck, Luc De Schepper and L. M. Stals, Synth. Met., 1996, 83, 261.
21. 20 S. Capaccioli, C. Pearson, A. P. Monkman, L. E. Horsburgh, P. A. Rolla and M. C. Petty, submitted to J. Phys. D.
22. 21 W. Riess, S Karg, V. Dyakonov, M. Meier and M. Schwoerer, J. Lumin., 1994, 60 & 61, 906.
23. 22 J. Scherbel, P. H. Nguyen, G. Paasch, W. Bruiting and M. Schwoerer, J. Appl. Phys., 1998, 83, 5045.
24. 23 E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, Wiley-Interscience, New York, 1982.