Light-emitting diodes based on polythiophene: Influence of the metal workfunction on rectification properties

Synthetic Metals

Volumn 76, Issue 1-3, 1996, Pages 85-89

  Garten, F ^a   Vrijmoeth, J ^a   Schlatmann, A R ^a   Gill, R E ^a   Klapwijk, T M ^a   Hadziioannou, G ^a  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

Author keywords

Diodes; Electroluminescence; Polythiophene; Rectification properties

Indexed keywords

BAND STRUCTURE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; ELECTRIC FIELDS; ELECTRODES; ELECTROLUMINESCENCE; ELECTRON TUNNELING; GOLD; LIGHT EMISSION; ORGANIC POLYMERS; POLYOLEFINS;

INDIUM TIN OXIDE; INJECTION MECHANISMS; METAL WORKFUNCTION; POLYTHIOPHENE; RECTIFICATION PROPERTIES;

LIGHT EMITTING DIODES;

EID: 0029774962     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/0379-6779(95)03424-I     Document Type: Article

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