|
|
Volumn 424, Issue , 1996, Pages 37-42
|
|
Nanostructure and electrical properties of anodized Al gate insulators for thin-film transistors
a
a
IBM JAPAN LTD
(Japan)
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
ALUMINUM;
ANODIC OXIDATION;
ATOMIC FORCE MICROSCOPY;
CATHODES;
COMPOSITION EFFECTS;
CURRENT DENSITY;
GATES (TRANSISTOR);
LEAKAGE CURRENTS;
MORPHOLOGY;
NANOSTRUCTURED MATERIALS;
SURFACE ROUGHNESS;
TRANSMISSION ELECTRON MICROSCOPY;
ETHYLENE GLYCOL;
GATE INSULATORS;
THIN FILM TRANSISTORS;
|
|
EID: 0030383909
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-424-37 Document Type: Conference Paper |
|
Times cited : (7)
|
|
References (8)
|
