Instability of diborane gas in silicon epitaxial film growth

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 807-815

  Habuka, Hitoshi ^a   Akiyama, Shoji ^a   Otsuka, Toru ^a   Qu, Wei Feng ^a  

^a SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; SEMICONDUCTING SILICON; SILICA; STAINLESS STEEL; THERMOANALYSIS;

DIBORANE GAS;

SEMICONDUCTING FILMS;

EID: 0033907172     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00732-0     Document Type: Article

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