Quantitative interpretation of electron-beam-induced current grain boundary contrast profiles with application to silicon

Journal of Applied Physics

Volumn 84, Issue 10, 1998, Pages 5473-5481

  Corkish, Richard ^a   Puzzer, Tom ^a   Sproul, A B ^a   Luke, Keung L ^b  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b CALIFORNIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342922040     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368310     Document Type: Article

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