Motion of hydrogen in silicon revealed by deep-level transient spectroscopy under uniaxial stress

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 122-127

  Kamiura, Y ^a   Fukuda, K ^a   Yamashita, Y ^a  

^a OKAYAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL BONDS; COMPRESSIVE STRESS; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; HYDROGEN; RELAXATION PROCESSES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

STRESS INDUCED ALIGNMENT;

SILICON WAFERS;

EID: 0033906371     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00664-8     Document Type: Article

References (12)

1. Yoneta M., Kamiura Y., Hashimoto F. J. Appl. Phys. 70:1991;1295.
2. Kamiura Y., Yoneta M., Hashimoto F. Appl. Phys. Lett. 59:1991;3165.
3. Kamiura Y., Yoneta M., Nishiyama Y., Hashimoto F. J. Appl. Phys. 72:1992;3394.
4. Kamiura Y., Tsutsue M., Hayashi M., Yamashita Y., Hashimoto F. Mater. Sci. Forum. 196-201:1995;903.
5. Kamiura Y., Hayashi M., Nishiyama Y., Ohyama S., Yamashita Y. Jpn. J. Appl. Phys. 36:1997;6579.
6. Maric D.M., Meier P.F., Estreicher S.K. Phys. Rev. B. 47:1993;3620.
7. Zhou Y., Luchsinger R., Meier P.F., Suter H.U., Maric D., Estreicher S.K. Mater. Sci. Forum. 196-201:1995;891.
8. Kaneta C., Katayama-Yoshida H. Mater. Sci. Forum. 196-201:1995;897.
9. Kamiura Y., Ishiga N., Yamashita Y. Jpn. J. Appl. Phys. 36:1997;L1419.
10. Kamiura Y., Ishiga N., Ohyama S., Yamashita Y. Mater. Sci. Forum. 258-263:1997;247.
11. Leary P., Jones R., Öberg S. Phys. Rev. B. 57:1998;3887.
12. Wieringen A.V., Warmoltz N. Physica. 22:1956;849.