Structure and stress-induced alignment of a hydrogen-carbon complex in silicon

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 11 PART A, 1997, Pages

  Kamiura, Yoichi ^a   Ishiga, Nobuaki ^a,b   Yamashita, Yoshifumi ^a  

^a OKAYAMA UNIVERSITY   (Japan)

^b Advanced Display Incorporated   (Japan)

Author keywords

Carbon; Defect; DLTS; Hydrogen; Si; Stress induced alignment

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; HYDROGEN BONDS; MOLECULAR ORIENTATION; MOLECULAR STRUCTURE; STRESSES;

COMPRESSIVE STRESSES;

SEMICONDUCTING SILICON;

EID: 0031276645     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1419     Document Type: Article

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