Kinetics of etching of silicon dioxide in a CF4 plasma

Journal of the Electrochemical Society

Volumn 147, Issue 3, 2000, Pages 1204-1209

  Kim, Min Tae ^a  

^a Korea Electric Power Research Institute (KEPRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; IONS; MATHEMATICAL MODELS; ORGANIC COMPOUNDS; PLASMAS; REACTION KINETICS; SURFACE CHEMISTRY;

DISCHARGE POWER; ETCH RATE; ION ENERGY FLUX; LANGMUIR TYPE SURFACE CHEMISTRY MODEL; PLASMA CHEMISTRY MODEL;

SILICA;

EID: 0033905924     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393337     Document Type: Article

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