Study of edge effects in the breakdown process of p+ on n-bulk silicon diodes

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 439, Issue 2, 2000, Pages 262-269

  Militaru, O ^a   Borrello, L ^b   Bozzi, C ^b   Da Rold, M ^c   Dell'Orso, R ^b   Dutta, S ^b   Messineo, A ^b   Mihul, A ^a   Tonelli, G ^b   Verdini, P G ^b   Wheadon, R ^d   Xie, Z ^b  

^a UNIVERSITY OF BUCHAREST   (Romania)

^b UNIVERSITY OF PISA   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

^d SEZIONE DI TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; NEUTRON IRRADIATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES;

SEMICONDUCTOR DETECTORS;

PARTICLE DETECTORS;

EID: 0033905797     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00874-8     Document Type: Article

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