Characterization and simulation of CMS-type silicon microstrip detectors

Nuovo Cimento della Societa Italiana di Fisica A

Volumn 112, Issue 1-2, 1999, Pages 67-74

  Bozzi, C ^a   Bondi, U ^b   Dell' Orso, R ^a   Messineo, A ^a   Rosi, G ^c   Tonelli, G ^a   Verdini, P G ^a   Wheadon, R ^d   Zhen, X ^a  

^a UNIVERSITY OF PISA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c ENEA C R CASACCIA   (Italy)

^d SEZIONE DI TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032623323     PISSN: 03693546     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. WHEADON R. et al., Process Dependence of the Capacitance of Silicon Microstrip Detectors, Conference Record of the 1995 IEEE Nuclear Science Symposium, October 21-28, 1995, San Francisco, guest editor MOONIER P. A., IEEE publication 95CH35898, pp. 196-200.
2. BOZZI C., Signal-to-Noise Evaluations for the CMS Silicon Microstrip Detectors, CMS-Note 1997/026, available from the author or via anonymous ftp on cmsdoc.cern.ch/documents/97/note97_026.ps.Z
3. BACCHETTA N. et al., this issue, p. 75.
4. GADOMSKY S. et al., Nucl. Instrum. Methods A, 320 (1992) 217.