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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 161-163, Issue , 2000, Pages 435-440

Topographical structure of MBE grown cubic inxGa1-x films studied with a MeV ion microprobe and by AFM

(7) Brenn, R a Jamieson, D M b Cimmino, A b Lee, K K b Frey, T c As, D J c Prawer, S b

a UNIVERSITY OF FREIBURG (Germany)

b UNIVERSITY OF MELBOURNE (Australia)

c UNIVERSITY OF PADERBORN (Germany)

Author keywords

AFM; Cubic InxGa1 xN; Ion channeling; Nuclear microprobe; PIXE; RBS

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR COUNTERS; SUBSTRATES; SURFACE TOPOGRAPHY; X RAY PRODUCTION;

INDIUM GALLIUM NITRIDE FILM; ION CHANNELING; ION MICROPROBE; SCANNING NUCLEAR MICROPROBE;

FILM GROWTH;

EID: 0033902330 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(99)00883-6 Document Type: Article

Times cited : (3)

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