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Volumn 97-98, Issue 1, 1996, Pages 135-170

Radioactive probe atoms in semiconductors

Author keywords

[No Author keywords available]

Indexed keywords


EID: 33646734732     PISSN: 03043843     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (16)

References (76)
  • 3
    • 0004304643 scopus 로고
    • R.A. Stradling and P.C. Klipstein, eds., Hilger, Bristol
    • R.A. Stradling and P.C. Klipstein, eds., Growth and Characterisation of Semiconductors (Hilger, Bristol, 1990).
    • (1990) Growth and Characterisation of Semiconductors
  • 4
    • 0003944822 scopus 로고
    • L.C. Feldman and J.W. Mayer, eds., North-Holland, Amsterdam
    • L.C. Feldman and J.W. Mayer, eds., Fundamentals of Surface and Thin Film Analysis (North-Holland, Amsterdam, 1986).
    • (1986) Fundamentals of Surface and Thin Film Analysis
  • 5
  • 18
    • 0346643065 scopus 로고
    • Universität Konstanz, Germany
    • R. Magerle, Diplomarbeit, Universität Konstanz, Germany (1991).
    • (1991) Diplomarbeit
    • Magerle, R.1
  • 34
    • 33646739991 scopus 로고    scopus 로고
    • Proc. lOthlnt. Conf. on Hyperfine Interactions
    • L. Wende et al., Proc. lOthlnt. Conf. on Hyperfine Interactions, Hyp. Int. 97/98 (1996) 221;
    • (1996) Hyp. Int. , vol.97-98 , pp. 221
    • Wende, L.1
  • 52
    • 0004192386 scopus 로고
    • K. Graff, ed., Springer Series in Materials Science, Springer, Berlin
    • K. Graff, ed., Metal Impurities in Silicon-Device Fabrication, Springer Series in Materials Science, Vol. 28 (Springer, Berlin, 1995).
    • (1995) Metal Impurities in Silicon-Device Fabrication , vol.28
  • 55
    • 6244292945 scopus 로고
    • ed. S.T. Pantelides Gordon and Breach, New York
    • D.V. Lang, in: Deep Centers in Semiconductors, ed. S.T. Pantelides (Gordon and Breach, New York, 1985) p. 489.
    • (1985) Deep Centers in Semiconductors , pp. 489
    • Lang, D.V.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.