Amorphous semiconductor sample preparation for transmission EXAFS measurements

Materials Research Society Symposium - Proceedings

Volumn 524, Issue , 1998, Pages 309-314

  Ridgway, M C ^a   Glover, C J ^a   Tan, H H ^a   Clark, A ^a   Karouta, F ^a   Foran, G J ^a   Lee, T W ^a   Moon, Y ^a   Yoon, E ^a   Hansen, J L ^a   Nylandsted Larsen, A ^a   Clerc, C ^a   Chaumont, J ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; HETEROJUNCTIONS; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON COMPOUNDS; STOICHIOMETRY; X RAY ANALYSIS;

AMORPHOUS SEMICONDUCTORS; EXTENDED X-RAY ABSORPTION FINE STRUCTURE (EXAFS); SELECTIVE CHEMICAL ETCHING;

AMORPHOUS MATERIALS;

EID: 0031630945     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-524-309     Document Type: Conference Paper

References (13)